PUMZ1,115 - TRANSISTOR DIS.100mA 40V NPN/PNP SOT363 GEN. SMT

PUMZ1,115
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HT Part No. HT260646

Mfr. Part No. PUMZ1,115

Manufacturer: NXP

Technical Documents:

2 - In Stock pcs
Price:
£ 0.048
Units Per Unit Prices
5 - 2999 £ 0.048
3000 + £ 0.040
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Product Specification

Product Attributes
Current 100mA
Package / Case SOT363
Rohs ROHS
Current Temperature (IC) 25°C
Junction Temperature (Tj) 150°C
Manufacturer NXP
Transistor Type General Purpose
Voltage (Collector-Emitter) 40V
Packaging TAPE&REEL
Mounting Type SMT
Channel NPN/PNP
Power Dissipation 300mW
Configuration Single
Applications General Purpose
Operating Temperature -65°C~+150°C

More Information

The NXP PUMZ1115 is a dual-transistor device combining NPN and PNP transistors in a single SOT363 package. It is designed for surface-mount technology (SMT) applications. This integrated circuit is housed in a SOT363 package, ideal for compact electronic designs requiring efficient transistor switching.

Distinct Features and Benefits of the NXP PUMZ1115 Dual-Transistor

  • Compact package size (SOT363) saves PCB space.
  • Integrated NPN and PNP transistors reduce component count.
  • Low power consumption (100mA, 40V) suitable for battery-operated devices.
  • High switching speed enhances circuit performance.

Application Versatility 

  • Power Management Circuits in Portable Devices
  • Signal Amplification and Switching in Consumer Electronics
  • Motor Control and Driver Circuits
  • Voltage Regulation and Current Sensing Applications

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